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NDS351AN

Manufacturer

National Semiconductor
Manufacturer's Part Number

NDS351AN
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 1.2 A; Transistor Element Material: SILICON;
Datasheet

Datasheet

1566 In Stock

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NDS351AN Technical Details

TYPE	DESCRIPTION
Other Names:	NDS351ANDKR NDS351ANTR 2156-NDS351AN-OS NDS351ANTR-NDR ONSFSCNDS351AN 2832-NDS351ANTR NDS351ANCT-NDR NDS351ANCT 2156-NDS351AN
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.2 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance:	.16 ohm

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