SN7002WH6327XTSA1 by Infineon Technologies

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SN7002WH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

SN7002WH6327XTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; JESD-609 Code: e3; Transistor Element Material: SILICON;
Datasheet

Datasheet

293 In Stock

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SN7002WH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Other Names:	SP000917572 IFEINFSN7002WH6327XTSA1 SN7002WH6327XTSA1TR 2156-SN7002WH6327XTSA1 SN7002WH6327XTSA1CT SN7002WH6327XTSA1DKR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	4.5 pF
Maximum Drain Current (ID):	.23 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Maximum Drain-Source On Resistance:	5 ohm
Moisture Sensitivity Level (MSL):	1

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