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FDV301N-F169

Manufacturer

Onsemi
Manufacturer's Part Number

FDV301N-F169
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn) - annealed; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3;
Datasheet

Datasheet

1554 In Stock

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FDV301N-F169 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.22 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	4 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2156-FDV301N-F169TR 488-FDV301N-F169TR 2832-FDV301N-F169TR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	25 V
Peak Reflow Temperature (C):	260

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