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FDV301N-F169
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ManufacturerOnsemi
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Manufacturer's Part NumberFDV301N-F169
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn) - annealed; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3;
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Datasheet
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DetailsFDV301N-F169 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .22 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) - annealed |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 25 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | 4 ohm |
Moisture Sensitivity Level (MSL): | 1 |