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NUD3105DMT1G

Manufacturer

Onsemi
Manufacturer's Part Number

NUD3105DMT1G
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY; No. of Elements: 2;
Datasheet

Datasheet

240 In Stock

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NUD3105DMT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.5 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1.3 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	ONSONSNUD3105DMT1G NUD3105DMT1GOSDKR NUD3105DMT1GOSCT 2156-NUD3105DMT1G-OS NUD3105DMT1GOSTR NUD3105DMT1GOS-ND NUD3105DMT1GOS
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	6 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C):	260

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