BSS138NE6327 by Infineon Technologies

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BSS138NE6327

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part Number
    BSS138NE6327
  • Description
    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 3.8 pF; JESD-609 Code: e3;
  • Datasheet

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BSS138NE6327 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .23 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .36 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .36 W
Maximum Drain-Source On Resistance: 3.5 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: BSS138INTR
BSS138INCT-ND
SP000014560
BSS138NEXTINCT
BSS138NEINCT-NDR
BSS138E6327
BSS138INTR-ND
BSS138NEINTR
BXX138NEXTINTR-ND
BSS138NEXTINCT-ND
BSS138NEINTR-NDR
BSS138NE6327
BSS138INCT
BSS138NEINCT
BSS138NEXTINTR
BSS138NE6327XT
Maximum Feedback Capacitance (Crss): 3.8 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: MIL-STD-883
Maximum Drain Current (Abs) (ID): .23 A
Peak Reflow Temperature (C): 260

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