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BSS138NE6327

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS138NE6327
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 3.8 pF; JESD-609 Code: e3;
Datasheet

Datasheet

238 In Stock

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BSS138NE6327 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.23 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.36 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.36 W
Maximum Drain-Source On Resistance:	3.5 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	BSS138INTR BSS138INCT-ND SP000014560 BSS138NEXTINCT BSS138NEINCT-NDR BSS138E6327 BSS138INTR-ND BSS138NEINTR BXX138NEXTINTR-ND BSS138NEXTINCT-ND BSS138NEINTR-NDR BSS138NE6327 BSS138INCT BSS138NEINCT BSS138NEXTINTR BSS138NE6327XT
Maximum Feedback Capacitance (Crss):	3.8 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	MIL-STD-883
Maximum Drain Current (Abs) (ID):	.23 A
Peak Reflow Temperature (C):	260

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