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ZVN2110A

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

ZVN2110A
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
Datasheet

Datasheet

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ZVN2110A Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.32 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.7 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	O-PSIP-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	4 ohm
Maximum Feedback Capacitance (Crss):	8 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.32 A
Peak Reflow Temperature (C):	260

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