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NDS355AN-F169

Manufacturer

Onsemi
Manufacturer's Part Number

NDS355AN-F169
Description

Small Signal Field-Effect Transistors;
Datasheet

Datasheet

1765 In Stock

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2N7002-7-F

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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2N7002

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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2N7002L

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;

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SI2329DS-T1-GE3

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IRF6216TRPBF

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 200 mJ; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 150 V;

DMP2035U-7

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BSS84AKW,115

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NXP Semiconductors' BSS84AKW,115 is a P-CHANNEL FET with 50V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a Drain Current of 0.15A and On Resistance of 8.5Ω. With a max operating temperature of 150°C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.

NDS356AP

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;