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BSS138NE7854

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS138NE7854
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum Operating Temperature: -55 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet

Datasheet

963 In Stock

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BSS138NE7854 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.23 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.36 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.36 W
Maximum Drain-Source On Resistance:	3.5 ohm
Other Names:	BSS138NE7854XT SP000014562 BSS138N E7854-ND BSS138NE7854
Maximum Feedback Capacitance (Crss):	3.8 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	MIL-STD-883
Peak Reflow Temperature (C):	NOT SPECIFIED

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