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NDS356AP

Manufacturer

National Semiconductor
Manufacturer's Part Number

NDS356AP
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

1018 In Stock

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NDS356AP Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.1 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.46 W
Maximum Drain-Source On Resistance:	.2 ohm
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	1.1 A

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