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NTF3055-100T1G

Manufacturer

Onsemi
Manufacturer's Part Number

NTF3055-100T1G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Pulsed Drain Current (IDM): 9 A; Package Shape: RECTANGULAR;
Datasheet

Datasheet

913 In Stock

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NTF3055-100T1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Maximum Pulsed Drain Current (IDM):	9 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	2.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.11 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	74 mJ
Other Names:	NTF3055-100T1GOSTR NTF3055100T1G NTF3055-100T1GOSDKR 2156-NTF3055-100T1G-OS NTF3055-100T1GOS NTF3055-100T1GOSCT ONSONSNTF3055-100T1G NTF3055-100T1GOS-ND
Maximum Feedback Capacitance (Crss):	155 pF
JEDEC-95 Code:	TO-261AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	3 A
Peak Reflow Temperature (C):	260

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