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NTJD5121NT1G

Manufacturer

Onsemi
Manufacturer's Part Number

NTJD5121NT1G
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .266 W; Additional Features: LOW THRESHOLD; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet

Datasheet

783 In Stock

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NTJD5121NT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.295 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.266 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1.6 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2832-NTJD5121NT1GTR NTJD5121NT1GOSTR NTJD5121NT1G-ND NTJD5121NT1GOSDKR ONSONSNTJD5121NT1G NTJD5121NT1GOSCT 2156-NTJD5121NT1G-OS
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOW THRESHOLD
Maximum Drain Current (Abs) (ID):	.295 A
Peak Reflow Temperature (C):	260

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