BSS84PWH6327XTSA1 by Infineon Technologies

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726	$0.032	$23.450

BSS84PWH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS84PWH6327XTSA1
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .15 A;
Datasheet

Datasheet

726 In Stock

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BSS84PWH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.15 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	8 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	SP000917564 BSS84PWH6327XTSA1DKR BSS84PWH6327XTSA1TR BSS84PWH6327XTSA1CT
Maximum Feedback Capacitance (Crss):	3.8 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

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