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IRF6216TRPBF

Manufacturer

International Rectifier
Manufacturer's Part Number

IRF6216TRPBF
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 200 mJ; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 150 V;
Datasheet

Datasheet

570 In Stock

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IRF6216TRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.2 A
Maximum Pulsed Drain Current (IDM):	19 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.24 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	200 mJ
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	150 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

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