BSL308PEH6327XTSA1 by Infineon Technologies

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BSL308PEH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSL308PEH6327XTSA1
Description

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 2 A;
Datasheet

Datasheet

162 In Stock

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BSL308PEH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Other Names:	BSL308PEH6327XTSA1-ND BSL308PEH6327XTSA1TR SP001101004 BSL308PEH6327XTSA1CT BSL308PEH6327XTSA1DKR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	18 pF
Maximum Drain Current (ID):	2 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Maximum Drain-Source On Resistance:	.08 ohm
Moisture Sensitivity Level (MSL):	1

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