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SI2323DS-T1

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI2323DS-T1
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .039 ohm; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (Abs) (ID): 3.7 A;
Datasheet

Datasheet

Not In Stock

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SI2323DS-T1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	140 pF
Maximum Drain Current (ID):	3.7 A
JEDEC-95 Code:	TO-236AB
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	3.7 A
Maximum Drain-Source On Resistance:	.039 ohm

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SI2323DS-T1 Technical Details

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