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BSS123IXTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS123IXTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Position: DUAL; Maximum Feedback Capacitance (Crss): 1.6 pF;
Datasheet

Datasheet

233 In Stock

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BSS123IXTSA1 Technical Details

TYPE	DESCRIPTION
Other Names:	448-BSS123IXTSA1TR 2156-BSS123IXTSA1TR 448-BSS123IXTSA1CT 448-BSS123IXTSA1DKR SP005558639
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	1.6 pF
Maximum Drain Current (ID):	.19 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	100 V
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	6 ohm

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