BSS123NH6433XTMA1 by Infineon Technologies

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BSS123NH6433XTMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS123NH6433XTMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3; Terminal Form: GULL WING;
Datasheet

Datasheet

370 In Stock

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BSS123NH6433XTMA1 Technical Details

TYPE	DESCRIPTION
Other Names:	BSS123NH6433XTMA1TR SP000939268 BSS123NH6433XTMA1DKR BSS123NH6433XTMA1CT
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	3.1 pF
Maximum Drain Current (ID):	.19 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	6 ohm

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