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MMBFJ112
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ManufacturerOnsemi
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Manufacturer's Part NumberMMBFJ112
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Field Effect Transistor Technology: JUNCTION; Terminal Finish: Tin (Sn);
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Datasheet
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DetailsMMBFJ112 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | JUNCTION |
Transistor Application: | SWITCHING |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .35 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DEPLETION MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 50 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 5 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Peak Reflow Temperature (C): | NOT SPECIFIED |