MMBFJ112 by Onsemi

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MMBFJ112

  • Manufacturer
    Onsemi
  • Manufacturer's Part Number
    MMBFJ112
  • Description
    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Field Effect Transistor Technology: JUNCTION; Terminal Finish: Tin (Sn);
  • Datasheet

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MMBFJ112 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 50 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 5 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED

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