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BSN20BKR

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BSN20BKR
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .265 A; Reference Standard: IEC-60134;
Datasheet

Datasheet

Not In Stock

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BSN20BKR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	7 pF
Maximum Drain Current (ID):	.265 A
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	IEC-60134
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	3.2 ohm

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