IRLML2502TRPBF-1 by Infineon Technologies

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IRLML2502TRPBF-1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRLML2502TRPBF-1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (Abs) (ID): 4.2 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

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IRLML2502TRPBF-1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	4.2 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	1.25 W
Maximum Drain-Source On Resistance:	.045 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	66 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Maximum Drain Current (Abs) (ID):	4.2 A

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