ZXM61N03FTA by Diodes Incorporated

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

ZXM61N03FTA

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

ZXM61N03FTA
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Additional Features: LOW THRESHOLD; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

Not In Stock

Popular Products

1N4148WS

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

0462-201-16141

TE Connectivity

TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.

Details

SBAV99LT1G

Onsemi

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

Details

LL4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

EU2B-YS3303C

Idec

ROTARY SWITCH;

Details

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

Details

ULN2803ADWR

Texas Instruments

ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.

Details

LM555CMX

Onsemi

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

NC7WZ07P6X

Fairchild Semiconductor

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

Details

SS14

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Protek Devices

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Leshan Radio

RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;

Details

M39029/56-351

Amphenol

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;

Details

BAV99

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

TM4C1294NCPDTI3

Texas Instruments

TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.

Details

OPA2277UA

Texas Instruments

OPA2277UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 100 uV and micropower consumption of 1.65 mA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1000 kHz in a small outline package.

Details

FDD5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;

Details

SS14

Vishay Intertechnology

Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.

Details

SMBJ18CA

Brightking

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ZXM61N03FTA Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.4 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.625 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.22 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	LOW THRESHOLD
Maximum Drain Current (Abs) (ID):	1.4 A
Peak Reflow Temperature (C):	260

Category Top Products

FDV303N_NL by Fairchild Semiconductor

FDV303N_NL

Fairchild Semiconductor

FDV303N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at 150°C max temp, it features ENHANCEMENT MODE technology for efficient performance.

NX7002AK,215 by NXP Semiconductors

NX7002AK,215

NXP Semiconductors

NXP Semiconductors' NX7002AK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.19A drain current. Ideal for switching applications, it operates in enhancement mode with 5.2 ohm on resistance. With a max power dissipation of 1.33W, this small outline transistor has a peak reflow temperature of 260°C.

SI1317DL-T1-GE3 by Vishay Intertechnology

SI1317DL-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI1317DL-T1-GE3 is a P-channel FET with 20V breakdown voltage and 1.4A drain current, ideal for switching applications. Featuring a built-in diode, it operates in enhancement mode with 0.15 ohm on-resistance and 44pF feedback capacitance. This small outline transistor has a max power dissipation of 0.5W and can withstand temperatures from -50 to 150°C.

BSP171PH6327 by Infineon Technologies

BSP171PH6327

Infineon Technologies

Infineon Technologies' BSP171PH6327 is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It has a max drain current of 1.9A and a max drain-source on resistance of 0.3 ohm. This small outline transistor is suitable for applications requiring high voltage and low resistance.

IRLML2803GTRPBF by International Rectifier

IRLML2803GTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-236AB;

BC548B by Tt Electronics Plc

BC548B

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; No. of Elements: 1;

FDC658AP by Onsemi

FDC658AP

Onsemi

The Onsemi FDC658AP is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for surface mount designs.

BSS138 by Jiangsu Changjiang Electronics Technology

BSS138

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;

FDC658P by Onsemi

FDC658P

Onsemi

FDC658P by Onsemi is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in enhancement mode. With a max drain current of 4A and a max power dissipation of 1.6W, it offers reliable performance in various electronic circuits.

2N7002 by Continental Device India

2N7002

Continental Device India

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;

BSS138WT106 by ROHM

BSS138WT106

ROHM

ROHM BSS138WT106 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.31A ID, and 3 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. With Gull Wing terminals and small outline package, it can handle up to 0.3W power dissipation.

FDN340P by Onsemi

FDN340P

Onsemi

FDN340P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The package is a SMALL OUTLINE with GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.

MMBF4117 by Fairchild Semiconductor

MMBF4117

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;

BSS138 by General Semiconductor

BSS138

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

NDC7001C by National Semiconductor

NDC7001C

National Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; JESD-30 Code: R-PDSO-G6; Maximum Drain Current (Abs) (ID): .51 A;

IRF9310TRPBF by International Rectifier

IRF9310TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Pulsed Drain Current (IDM): 160 A; Qualification: Not Qualified;

STN3NF06L by STMicroelectronics

STN3NF06L

STMicroelectronics

STN3NF06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 3A Drain Current, and 0.12 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it offers high power dissipation and built-in diode for enhanced performance.

BS170P by Zetex Plc

BS170P

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Elements: 1; No. of Terminals: 3;

BSS138 by Good-ark Electronics

BSS138

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

NDS7002A_NL by Fairchild Semiconductor

NDS7002A_NL

Fairchild Semiconductor

Fairchild Semiconductor's NDS7002A_NL is a N-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 2 ohm RDS. Ideal for switching applications in enhancement mode, it operates b/w -65 to 150 °C with a max power dissipation of 0.3W.