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NTJD1155LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberNTJD1155LT1G
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DescriptionN-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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Datasheet
2058 In Stock
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DetailsNTJD1155LT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1.3 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | .4 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .175 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | NTJD1155LT1GOSTR ONSNTJD1155LT1G 2156-NTJD1155LT1G-OS NTJD1155LT1GOSCT NTJD1155LT1GOSDKR 2832-NTJD1155LT1GTR |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 8 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 1.3 A |
| Peak Reflow Temperature (C): | 260 |
