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NTJD1155LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

NTJD1155LT1G
Description

N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

2058 In Stock

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NTJD1155LT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.3 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.175 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	NTJD1155LT1GOSTR ONSNTJD1155LT1G 2156-NTJD1155LT1G-OS NTJD1155LT1GOSCT NTJD1155LT1GOSDKR 2832-NTJD1155LT1GTR
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	8 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	1.3 A
Peak Reflow Temperature (C):	260

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