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PMV65XPER

Manufacturer

Nexperia
Manufacturer's Part Number

PMV65XPER
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .078 ohm;
Datasheet

Datasheet

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PMV65XPER Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.8 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.078 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	1727-2311-6 5202-PMV65XPERTR 1727-2311-2 568-12597-1-ND 568-12597-2-ND 568-12597-6-ND 568-12597-6 934068499215 1727-2311-1 568-12597-2 568-12597-1
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	20 V
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260

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