Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DMN6140L-7

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

DMN6140L-7
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Transistor Application: SWITCHING; Reference Standard: AEC-Q101;
Datasheet

Datasheet

Not In Stock

Popular Products

2N2222A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148WS

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Goodwork Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SMBJ18CA

Microsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Changzhou Starsea Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM317T

STMicroelectronics

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;

Details

LM317TG

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;

Details

LL4148

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

ULN2803A

Vishay Intertechnology

NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;

Details

1N4148

Micro Commercial Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;

Details

2N7002

Kec

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

LM317T

Bay Linear

Other Regulators; No. of Terminals: 3; No. of Outputs: 1; Surface Mount: NO; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel;

Details

2N2222A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

LM358N

Intersil

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

LL4148

Synsemi

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BAT54C-7-F

Diodes Incorporated

BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.

Details

LL4148

Hy Electronic

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

DMN6140L-7 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.6 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.14 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	DMN6140L-7DITR DMN6140L-7DICT DMN6140L-7DIDKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Additional Features:	HIGH RELIABILITY
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

Category Top Products

NTR4170NT1G

Onsemi

NTR4170NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A ID, and 0.055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. This small outline transistor has a max power dissipation of 1.25W and can withstand temperatures up to 150°C.

SI2319CDS-T1-GE3

Vishay Intertechnology

SI2319CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 40V breakdown voltage and 4.4A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.5W. The small outline package and -55 to 150°C operating temperature range make it suitable for various electronic designs.

2N7000

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Terminal Form: WIRE;

FDC6420C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Terminal Position: DUAL;

SI2315BDS-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI2315BDS-T1-E3 is a P-CHANNEL FET with 12V DS Breakdown Voltage, 2.8A Drain Current, and 0.05 ohm On Resistance. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and -55 to 150 °C operating temperature range.

BSS138-TP

Micro Commercial Components

BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.

FDV303N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;

T2N7002BK,LM

Toshiba

Toshiba T2N7002BK,LM is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode and resistor. With 1W power dissipation and 1.75 ohm Drain-Source Resistance, it operates in ENHANCEMENT MODE for efficient performance.

SI2319DS-T1-E3

Vishay Intertechnology

SI2319DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.082 ohm On Resistance. Suitable for surface mount, it has a max operating temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.

NDS0605-F169

Onsemi

NDS0605-F169 by Onsemi is a P-CHANNEL small signal FET with 60V DS breakdown voltage. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max power dissipation of 0.36W and can withstand temperatures up to 150°C.

SI4532DY

Vishay Siliconix

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G8;

2N7002L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Terminal Position: DUAL; Maximum Drain-Source On Resistance: 7.5 ohm;

MMBF4117

Onsemi

MMBF4117 by Onsemi is a N-CHANNEL FET in PLASTIC/EPOXY package, ideal for SWITCHING applications. With 3 terminals and 0.225W power dissipation, it operates in DEPLETION MODE at up to 150°C. Featuring GULL WING terminals and 1.5pF feedback capacitance, it's a versatile choice for small outline surface mount designs.

BSP171PH6327

Infineon Technologies

Infineon Technologies' BSP171PH6327 is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It has a max drain current of 1.9A and a max drain-source on resistance of 0.3 ohm. This small outline transistor is suitable for applications requiring high voltage and low resistance.

BC548B

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; No. of Elements: 1;

BC548B

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

BSS138NH6433XTMA1

Infineon Technologies

BSS138NH6433XTMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.36W power dissipation, and 3.5 ohm drain-source resistance. Ideal for small outline applications in automotive electronics due to AEC-Q101 reference standard compliance and -55 to 150 °C operating temperature range.

FDG6301N

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;

NTR4503NT1G

Onsemi

NTR4503NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 1.5A max drain current, and 0.11 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode, surface mountable, and has a max operating temperature of 150°C.

2N7002K

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Minimum Operating Temperature: -65 Cel;