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BSS670S2LH6327XTSA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberBSS670S2LH6327XTSA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): 10 pF;
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Datasheet
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DetailsBSS670S2LH6327XTSA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .54 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .825 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | BSS670S2L H6327DKR BSS670S2L H6327CT BSS670S2LH6327XTSA1CT BSS670S2L H6327DKR-ND BSS670S2L H6327-ND BSS670S2LH6327XTSA1TR BSS670S2LH6327XTSA1DKR SP000928950 BSS670S2L H6327CT-ND BSS670S2L H6327TR-ND BSS670S2L H6327 BSS670S2LH6327 |
| Maximum Feedback Capacitance (Crss): | 10 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 55 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Peak Reflow Temperature (C): | 260 |
