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T2N7002AK,LM

Manufacturer

Toshiba
Manufacturer's Part Number

T2N7002AK,LM
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; JESD-30 Code: R-PDSO-G3;
Datasheet

Datasheet

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T2N7002AK,LM Technical Details

TYPE	DESCRIPTION
Other Names:	T2N7002AKLM(BDKR-ND T2N7002AK,LM(T T2N7002AKLM(BTR T2N7002AK,LM(B T2N7002AKLM(BDKR T2N7002AKLM(BCT-ND T2N7002AKLM(BCT T2N7002AKLMCT T2N7002AKLMDKR T2N7002AKLMTR T2N7002AKLM(BTR-ND
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	.7 pF
Maximum Drain Current (ID):	.2 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	4.7 ohm
Moisture Sensitivity Level (MSL):	1

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