SI9945BDY-T1-GE3 by Vishay Intertechnology

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SI9945BDY-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI9945BDY-T1-GE3
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

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SI9945BDY-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5.3 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	8
Maximum Power Dissipation (Abs):	3.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.058 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	5.3 A
Peak Reflow Temperature (C):	260

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SI9945BDY-T1-GE3 Technical Details

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