BSS209PWH6327XTSA1 by Infineon Technologies

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BSS209PWH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS209PWH6327XTSA1
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 45 pF; Maximum Drain-Source On Resistance: .55 ohm;
Datasheet

Datasheet

936 In Stock

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BSS209PWH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Other Names:	BSS209PWH6327XTSA1TR BSS209PWH6327XTSA1CT SP000750498 BSS209PWH6327XTSA1DKR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	45 pF
Maximum Drain Current (ID):	.63 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Maximum Drain-Source On Resistance:	.55 ohm
Moisture Sensitivity Level (MSL):	1

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