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NDC7002N

Manufacturer

National Semiconductor
Manufacturer's Part Number

NDC7002N
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Power Dissipation Ambient: 1.4 W; Maximum Operating Temperature: 150 Cel;
Datasheet

Datasheet

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NDC7002N Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.51 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.96 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	1.4 W
Maximum Drain-Source On Resistance:	2 ohm
Maximum Feedback Capacitance (Crss):	5 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	50 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.51 A

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