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SI4459ADY-T1-GE3
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ManufacturerVishay Siliconix
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Manufacturer's Part NumberSI4459ADY-T1-GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .005 ohm;
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Datasheet
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DetailsSI4459ADY-T1-GE3 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 19.7 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | PURE MATTE TIN |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .005 ohm |
Moisture Sensitivity Level (MSL): | 1 |