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FQT1N60CTF-WS

Manufacturer

Onsemi
Manufacturer's Part Number

FQT1N60CTF-WS
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 150 Cel;
Datasheet

Datasheet

1804 In Stock

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FQT1N60CTF-WS Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.2 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	2.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	11.5 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	FQT1N60CTF-WSDKR FQT1N60CTF_WSDKR-ND FQT1N60CTF_WSTR FQT1N60CTF-WSCT FQT1N60CTF_WS FQT1N60CTF_WSCT-ND FQT1N60CTF_WSTR-ND FQT1N60CTF_WSCT FQT1N60CTF-WSTR FQT1N60CTFWS FQT1N60CTF_WSDKR
Maximum Feedback Capacitance (Crss):	6 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.2 A
Peak Reflow Temperature (C):	250

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