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ZVN3320FTA
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ManufacturerDiodes Incorporated
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Manufacturer's Part NumberZVN3320FTA
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; JESD-30 Code: R-PDSO-G3; Qualification: Not Qualified;
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Datasheet
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DetailsZVN3320FTA Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Turn On Time (ton): | 12 ns |
Maximum Drain Current (ID): | .06 A |
Maximum Pulsed Drain Current (IDM): | 1 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .33 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 12 ns |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Power Dissipation Ambient: | .33 W |
Maximum Drain-Source On Resistance: | 25 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 5 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 200 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | .06 A |
Peak Reflow Temperature (C): | 260 |