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ZVN3320FTA

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

ZVN3320FTA
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; JESD-30 Code: R-PDSO-G3; Qualification: Not Qualified;
Datasheet

Datasheet

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ZVN3320FTA Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	12 ns
Maximum Drain Current (ID):	.06 A
Maximum Pulsed Drain Current (IDM):	1 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.33 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	12 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.33 W
Maximum Drain-Source On Resistance:	25 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	5 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.06 A
Peak Reflow Temperature (C):	260

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