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2N7002BKM,315

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

2N7002BKM,315
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Terminal Position: BOTTOM; Package Style (Meter): CHIP CARRIER;
Datasheet

Datasheet

Not In Stock

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2N7002BKM,315 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.45 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	2.7 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.6 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101; IEC-60134
Maximum Drain Current (Abs) (ID):	.45 A
Peak Reflow Temperature (C):	260

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