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LND150N3-GP013
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ManufacturerMicrochip Technology
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Manufacturer's Part NumberLND150N3-GP013
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Package Shape: ROUND;
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Datasheet
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DetailsLND150N3-GP013 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 1 pF |
| Maximum Drain Current (ID): | .03 A |
| JEDEC-95 Code: | TO-92 |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 500 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-T3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | DEPLETION MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 1000 ohm |
