BSD235CH6327XTSA1 by Infineon Technologies

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BSD235CH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSD235CH6327XTSA1
Description

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 20 V;
Datasheet

Datasheet

738 In Stock

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BSD235CH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Other Names:	BSD235C H6327TR-ND BSD235C H6327CT BSD235C H6327 SP000917610 BSD235C H6327DKR-ND BSD235C H6327CT-ND BSD235CH6327XT BSD235CH6327XTSA1CT BSD235CH6327 BSD235C H6327DKR BSD235CH6327XTSA1DKR BSD235CH6327XTSA1TR BSD235C H6327-ND
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.95 A
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Maximum Drain-Source On Resistance:	.35 ohm
Moisture Sensitivity Level (MSL):	1

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