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LND150K1-G
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ManufacturerMicrochip Technology
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Manufacturer's Part NumberLND150K1-G
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Qualification: Not Qualified;
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Datasheet
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DetailsLND150K1-G Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .013 A |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .36 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DEPLETION MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Power Dissipation Ambient: | .36 W |
Maximum Drain-Source On Resistance: | 1000 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 1 pF |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 500 V |
Qualification: | Not Qualified |
Peak Reflow Temperature (C): | 260 |