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BF862
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ManufacturerNXP Semiconductors
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Manufacturer's Part NumberBF862
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: JUNCTION; Moisture Sensitivity Level (MSL): 1;
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Datasheet
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DetailsBF862 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | JUNCTION |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .04 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .225 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DEPLETION MODE |
Maximum Operating Temperature: | 150 Cel |
Moisture Sensitivity Level (MSL): | 1 |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Peak Reflow Temperature (C): | 260 |