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MMBF170-7-F

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

MMBF170-7-F
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON; No. of Terminals: 3;
Datasheet

Datasheet

Not In Stock

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MMBF170-7-F Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.5 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.3 W
Maximum Drain-Source On Resistance:	5 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	MMBF170-FDICT MMBF170-FDIDKR MMBF170-FDITR MMBF1707F
Maximum Feedback Capacitance (Crss):	5 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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