BSS127H6327XTSA2 by Infineon Technologies

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BSS127H6327XTSA2

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS127H6327XTSA2
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 600 V; Package Shape: RECTANGULAR;
Datasheet

Datasheet

726 In Stock

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BSS127H6327XTSA2 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.021 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	600 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	BSS127H6327XTSA2TR BSS127H6327XTSA2DKR BSS127H6327XTSA2CT SP000919332
Maximum Feedback Capacitance (Crss):	1.5 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C):	260

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