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BSS84AKS,115

Manufacturer

Nexperia
Manufacturer's Part Number

BSS84AKS,115
Description

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 8.5 ohm; Minimum DS Breakdown Voltage: 50 V;
Datasheet

Datasheet

388 In Stock

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BSS84AKS,115 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.16 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	8.5 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	1727-6480-6 934065308115 568-8394-6 568-8394-1 568-8394-2 BSS84AKS115 568-8394-2-ND 1727-6480-1 1727-6480-2 5202-BSS84AKS,115TR 568-8394-6-ND 568-8394-1-ND
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	50 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260

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