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SI4532CDY-T1-GE3

Manufacturer

Vishay Siliconix
Manufacturer's Part Number

SI4532CDY-T1-GE3
Description

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): 6 A; Maximum Drain-Source On Resistance: .047 ohm;
Datasheet

Datasheet

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SI4532CDY-T1-GE3 Technical Details

TYPE	DESCRIPTION
Other Names:	SI4532CDY-T1-GE3DKR SI4532CDY-T1-GE3CT SI4532CDY-T1-GE3-ND SI4532CDYT1GE3 SI4532CDY-T1-GE3TR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6 A
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
Terminal Finish:	PURE MATTE TIN
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.047 ohm
Moisture Sensitivity Level (MSL):	1

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