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L2N7002LT1G

Manufacturer

Leshan Radio
Manufacturer's Part Number

L2N7002LT1G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet

Datasheet

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L2N7002LT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.115 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	7.5 ohm
Maximum Feedback Capacitance (Crss):	5 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	.075 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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