Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSS138WQ-13-F

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

BSS138WQ-13-F
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Feedback Capacitance (Crss): 8 pF; Maximum Operating Temperature: 150 Cel;
Datasheet

Datasheet

Not In Stock

Popular Products

MBRS340T3G

Onsemi

MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.

Details

BSS138

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;

Details

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.

Details

LM358N

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

BAV99

Panasonic

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

LL4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148

Onsemi

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148

International Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Excel (Suzhou) Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN2803A

Onsemi

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

Details

LL4148

Excel (Suzhou) Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FDV304P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;

Details

LM2931Z-5.0RPG

Onsemi

LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.

Details

LL4148

Synsemi

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148-GS08

Vishay Intertechnology

The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.

Details

LM107H/883

Linear Technology

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

Details

MMBT2907ALT1G

Rochester Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;

Details

MBR0530T1G

Onsemi

MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.

Details

LM317T

Analog Devices

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;

Details

BSS138WQ-13-F Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.2 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.2 W
Maximum Drain-Source On Resistance:	3.5 ohm
Other Names:	31-BSS138WQ-13-FTR
Maximum Feedback Capacitance (Crss):	8 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	50 V
Reference Standard:	AEC-Q101; UL RECOGNIZED

Category Top Products

FDS9431A

Onsemi

The Onsemi FDS9431A is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3.5A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.5W at 150°C.

NDC7003P

National Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 6;

2N7002BKVL

Nexperia

2N7002BKVL by Nexperia is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications in ENHANCEMENT MODE. Features include 0.35A Drain Current, 1.6 ohm On Resistance, and -55 to 150 °C Operating Temperature range.

2N7002W

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .115 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

2N7002KW

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA-LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;

BSS138BKWT106

ROHM

Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 10;

BSS123-G

Onsemi

Small Signal Field-Effect Transistors; Terminal Finish: Matte Tin (Sn) - annealed; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

BSS84PWL6327

Infineon Technologies

BSS84PWL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 0.15A max drain current. Ideal for small outline applications, it features a built-in diode, 8 ohm max on resistance, and operates in enhancement mode at up to 150°C.

AO3401A

Alpha & Omega Semiconductor

AO3401A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for various electronic devices.

BS170-D75Z

Onsemi

BS170-D75Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates at up to 150°C with a power dissipation of 0.83W in a ROUND package.

FDV304P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;

2N7000

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JEDEC-95 Code: TO-92; Transistor Application: SWITCHING;

LND150K1-G

Microchip Technology

LND150K1-G by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max power dissipation of 0.36W and can handle a max drain current of 0.013A. With a temp range from -55 to 150 °C, this MOSFET is suitable for various electronic designs.

FDG6301N

Onsemi

The Onsemi FDG6301N is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 0.22A Drain Current, and 4 ohm On Resistance. With GULL WING terminals and SMALL OUTLINE package style, it operates in ENHANCEMENT MODE at up to 150°C.

2N7002W

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;

LND150N3-G

Microchip Technology

LND150N3-G by Microchip is a N-CHANNEL FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.74W power dissipation and -55 to 150°C temperature range. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

BS170

Itt Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD;

FDG6332C-F085P

Onsemi

Onsemi's FDG6332C-F085P is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm RDS(on). Operating from -55 to 150°C, this MOSFET is AEC-Q101 compliant and comes in a small outline package.

BSS84PH6433XTMA1

Infineon Technologies

BSS84PH6433XTMA1 by Infineon is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.17A Drain Current, 8 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has METAL-OXIDE SEMICONDUCTOR tech and meets AEC-Q101 standards for automotive use.

SBSS84LT1G

Onsemi

SBSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage, 0.13A Drain Current, and 10Ω On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has GULL WING terminals and can handle up to 150°C temperature.