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SBSS84LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

SBSS84LT1G
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 10 ohm; Minimum DS Breakdown Voltage: 50 V;
Datasheet

Datasheet

568 In Stock

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SBSS84LT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.13 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.225 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	10 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	SBSS84LT1GOSDKR SBSS84LT1GOSCT SBSS84LT1G-ND SBSS84LT1GOSTR
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	50 V
Maximum Drain Current (Abs) (ID):	.13 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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