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Bulk
| QTY | Unit Price | Ext Price |
| 568 | $0.332 | $188.860 |
SBSS84LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberSBSS84LT1G
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 10 ohm; Minimum DS Breakdown Voltage: 50 V;
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Datasheet
568 In Stock
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DetailsSBSS84LT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .13 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .225 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 10 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | SBSS84LT1GOSDKR SBSS84LT1GOSCT SBSS84LT1G-ND SBSS84LT1GOSTR |
| JEDEC-95 Code: | TO-236 |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 50 V |
| Maximum Drain Current (Abs) (ID): | .13 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
