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FDMC8030

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FDMC8030
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Position: DUAL; JESD-609 Code: e4;
Datasheet

Datasheet

807 In Stock

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FDMC8030 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	4
Maximum Power Dissipation (Abs):	1.9 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N4
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.01 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	FDMC8030CT FDMC8030-ND 2156-FDMC8030-OS FDMC8030DKR ONSONSFDMC8030 FDMC8030TR
Maximum Feedback Capacitance (Crss):	30 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	40 V
Maximum Drain Current (Abs) (ID):	12 A
Peak Reflow Temperature (C):	260

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