BSS316NH6327XTSA1 by Infineon Technologies

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BSS316NH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS316NH6327XTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Terminal Form: GULL WING; Maximum Drain Current (ID): 1.4 A;
Datasheet

Datasheet

518 In Stock

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BSS316NH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Other Names:	SP000928948 BSS316N H6327DKR-ND BSS316N H6327 BSS316N H6327-ND BSS316NH6327XTSA1DKR BSS316NH6327XTSA1CT BSS316N H6327TR-ND BSS316NH6327 BSS316N H6327CT-ND BSS316N H6327CT BSS316NH6327XTSA1TR BSS316N H6327DKR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	7 pF
Maximum Drain Current (ID):	1.4 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance:	.16 ohm
Moisture Sensitivity Level (MSL):	1

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