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SQ2361AEES-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQ2361AEES-T1-GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Feedback Capacitance (Crss): 45 pF;
Datasheet

Datasheet

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SQ2361AEES-T1-GE3 Technical Details

TYPE	DESCRIPTION
Other Names:	SQ2361AEES-T1_GE3DKR SQ2361AEES-T1-GE3 SQ2361AEES-T1_GE3-ND SQ2361AEES-T1_GE3TR SQ2361AEES-T1_GE3CT
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	45 pF
Maximum Drain Current (ID):	2.8 A
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.17 ohm

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