BSL215CH6327XTSA1 by Infineon Technologies

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BSL215CH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSL215CH6327XTSA1
Description

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
Datasheet

Datasheet

150 In Stock

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BSL215CH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.5 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.5 W
Maximum Drain-Source On Resistance:	.14 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	BSL215CH6327XTSA1DKR SP001101000 BSL215CH6327XTSA1-ND BSL215CH6327XTSA1TR BSL215CH6327XTSA1CT
Maximum Feedback Capacitance (Crss):	9 pF
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101

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