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2N7000-G
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ManufacturerSupertex
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Manufacturer's Part Number2N7000-G
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;
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Datasheet
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Details2N7000-G Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 5 pF |
Maximum Drain Current (ID): | .2 A |
JEDEC-95 Code: | TO-92 |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-T3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | HIGH INPUT IMPEDANCE |
Maximum Drain-Source On Resistance: | 5 ohm |