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BF862,215
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ManufacturerNXP Semiconductors
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Manufacturer's Part NumberBF862,215
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): .04 A;
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Datasheet
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DetailsBF862,215 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .04 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .225 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DEPLETION MODE |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | 954-BF862215 568-1968-6 934055519215 568-1968-1 568-1968-2 BF862 T/R |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | 260 |
